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| Previous Datasheet Index Next Data Sheet Preliminary Data Sheet PD - 9.1029 IRGPH40M INSULATED GATE BIPOLAR TRANSISTOR Features * Short circuit rated - 10s @ 125C, V GE = 15V * Switching-loss rating includes all "tail" losses * Optimized for medium operating frequency (1 to 10kHz) G E C Short Circuit Rated Fast IGBT VCES = 1200V VCE(sat) 3.4V @VGE = 15V, I C = 18A n-channel Description Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-voltage, highcurrent applications. These new short circuit rated devices are especially suited for motor control and other applications requiring short circuit withstand capability. TO-247AC Absolute Maximum Ratings Parameter VCES IC @ T C = 25C IC @ T C = 100C ICM ILM tsc VGE EARV PD @ T C = 25C PD @ T C = 100C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Short Circuit Withstand Time Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting torque, 6-32 or M3 screw. Max. 1200 31 18 62 62 10 20 15 160 65 -55 to +150 300 (0.063 in. (1.6mm) from case) 10 lbf*in (1.1N*m) Units V A s V mJ W C Thermal Resistance Parameter RJC RCS RJA Wt Junction-to-Case Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight Min. -- -- -- -- Typ. -- 0.24 -- 6 (0.21) Max. 0.77 -- 40 -- Units C/W g (oz) Revision 1 C-469 To Order Previous Datasheet Index Next Data Sheet IRGPH40M Electrical Characteristics @ T = 25C (unless otherwise specified) J V(BR)CES V(BR)ECS V(BR)CES/TJ VCE(on) Parameter Collector-to-Emitter Breakdown Voltage Emitter-to-Collector Breakdown Voltage Temperature Coeff. of Breakdown Voltage Collector-to-Emitter Saturation Voltage VGE(th) VGE(th)/TJ gfe ICES IGES Gate Threshold Voltage Temperature Coeff. of Threshold Voltage Forward Transconductance Zero Gate Voltage Collector Current Gate-to-Emitter Leakage Current Min. Typ. Max. Units Conditions 1200 -- -- V VGE = 0V, I C = 250A 20 -- -- V VGE = 0V, IC = 1.0A -- 1.1 -- V/C VGE = 0V, I C = 1.0mA -- 2.3 3.4 IC = 18A -- 3.0 -- V IC = 31A V GE = 15V -- 2.8 -- IC = 18A, T J = 150C 3.0 -- 5.5 VCE = VGE, IC = 250A -- -14 -- mV/C VCE = VGE, IC = 250A 4.0 10 -- S VCE = 100V, I C = 18A -- -- 250 A VGE = 0V, V CE = 1200V -- -- 3500 VGE = 0V, V CE = 1200V, T J = 150C -- -- 100 nA VGE = 20V Switching Characteristics @ T = 25C (unless otherwise specified) J Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets tsc td(on) tr td(off) tf Ets LE Cies Coes Cres Notes: Repetitive rating; V GE=20V, pulse width limited by max. junction temperature. VCC=80%(V CES), VGE=20V, L=10H, R G= 10 Repetitive rating; pulse width limited by maximum junction temperature. Pulse width 80s; duty factor 0.1%. Pulse width 5.0s, single shot. Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Short Circuit Withstand Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. Typ. Max. Units Conditions -- 50 75 IC = 18A -- 11 21 nC VCC = 400V -- 15 30 VGE = 15V -- 30 -- TJ = 25C -- 21 -- ns IC = 18A, V CC = 960V -- 400 890 VGE = 15V, R G = 10 -- 390 740 Energy losses include "tail" -- 1.1 -- -- 6.3 -- mJ -- 7.4 14 10 -- -- s VCC = 720V, T J = 125C VGE = 15V, R G = 10, VCPK < 1000V -- 28 -- TJ = 150C, -- 24 -- ns IC = 18A, V CC = 960V -- 600 -- VGE = 15V, R G = 10 -- 870 -- Energy losses include "tail" -- 15 -- mJ -- 13 -- nH Measured 5mm from package -- 1360 -- VGE = 0V -- 100 -- pF VCC = 30V -- 15 -- = 1.0MHz Refer to Section D - page D-13 for Package Outline 3 - JEDEC Outline TO-247AC C-470 To Order |
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